低阈值，高功率，单模630纳米激光器

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763617

R. Geels, D. Welch, D. Scifres, D. Bour, D. W. Treat, R. Bringans

{"title":"低阈值，高功率，单模630纳米激光器","authors":"R. Geels, D. Welch, D. Scifres, D. Bour, D. W. Treat, R. Bringans","doi":"10.1109/ISLC.1992.763617","DOIUrl":null,"url":null,"abstract":"We report output powers exceeding 45 mW, under CW, room temperature operation from single mode AlGaInP visible lasers emitting at 636 run. Threshold currents as low as 30 mA and single mode output powers of 40 mW have been obtained.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Low threshold, high power, single mode 630 nm lasers\",\"authors\":\"R. Geels, D. Welch, D. Scifres, D. Bour, D. W. Treat, R. Bringans\",\"doi\":\"10.1109/ISLC.1992.763617\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report output powers exceeding 45 mW, under CW, room temperature operation from single mode AlGaInP visible lasers emitting at 636 run. Threshold currents as low as 30 mA and single mode output powers of 40 mW have been obtained.\",\"PeriodicalId\":207712,\"journal\":{\"name\":\"13th IEEE International Semiconductor Laser Conference\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"13th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1992.763617\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"13th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1992.763617","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

我们报告了在连续波、室温下，636次运行的单模AlGaInP可见激光器输出功率超过45 mW。阈值电流低至30毫安，单模输出功率为40毫瓦。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Low threshold, high power, single mode 630 nm lasers

We report output powers exceeding 45 mW, under CW, room temperature operation from single mode AlGaInP visible lasers emitting at 636 run. Threshold currents as low as 30 mA and single mode output powers of 40 mW have been obtained.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

13th IEEE International Semiconductor Laser Conference

自引率

0.00%

发文量