{"title":"在Si衬底上制备低应力和低位错密度AlGaAs/GaAs激光二极管","authors":"N. Wada, S. Yosfumi, S. Sakai, M. Fukui","doi":"10.1109/ISLC.1992.763568","DOIUrl":null,"url":null,"abstract":"AlGaAs/GaAs double-hetero-structure laser diodes utilizing the UCGAS (undercut GaAs on Si) which had very low dark spot density and the thermal stress have been fabricated. The diodes lased successfully under pulsed condition at room temperature.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Low stress and low dislocation density AlGaAs/GaAs laser diodes fabricated on Si substrates\",\"authors\":\"N. Wada, S. Yosfumi, S. Sakai, M. Fukui\",\"doi\":\"10.1109/ISLC.1992.763568\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"AlGaAs/GaAs double-hetero-structure laser diodes utilizing the UCGAS (undercut GaAs on Si) which had very low dark spot density and the thermal stress have been fabricated. The diodes lased successfully under pulsed condition at room temperature.\",\"PeriodicalId\":207712,\"journal\":{\"name\":\"13th IEEE International Semiconductor Laser Conference\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"13th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1992.763568\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"13th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1992.763568","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
利用UCGAS (underdedgaas on Si)制备了具有极低暗斑密度和热应力的AlGaAs/GaAs双异质结构激光二极管。在室温下，二极管在脉冲条件下成功激光。
Low stress and low dislocation density AlGaAs/GaAs laser diodes fabricated on Si substrates
AlGaAs/GaAs double-hetero-structure laser diodes utilizing the UCGAS (undercut GaAs on Si) which had very low dark spot density and the thermal stress have been fabricated. The diodes lased successfully under pulsed condition at room temperature.
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