{"title":"Transient carrier responses in multiple quantum well lasers","authors":"N. Tessler, G. Eisenstein","doi":"10.1109/ISLC.1992.763563","DOIUrl":null,"url":null,"abstract":"We model transient response of injected carriers in quantum well lasers. We describe carrier dynamics resulting from transport along confinement regions, injection bottleneck into the wells and mutual interactions between electrons and holes.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"13th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1992.763563","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We model transient response of injected carriers in quantum well lasers. We describe carrier dynamics resulting from transport along confinement regions, injection bottleneck into the wells and mutual interactions between electrons and holes.