T. Odagawa, K. Nakajima, K. Tanaka, T. Inoue, N. Okazaki, K. Wakao
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High-speed operation of strained InGaAs/InGaAsP MQW lasers
High-speed operation of InGaAs/InGaAsP strained-layer MQW lasers has been achieved at 70 /spl deg/C under zero-bias condition by optimizing the SCH structure.
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