{"title":"1.07 /spl mu/m (InAs)/sub 1//(GaAs)/sub 2/short period superlattice strained quantum well ridge waveguide laser","authors":"H. Kurakake, T. Uchida, H. Soda, S. Yamazaki","doi":"10.1109/ISLC.1992.763639","DOIUrl":null,"url":null,"abstract":"High performance ridge waveguide lasers with (InAs)/sub 1//(GaAS)/sub 2/ short period superlattice (SPS) active layer have been fabricated. A characteristic temperature of 156K is obtained at 1.07 /spl mu/m wavelength.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"13th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1992.763639","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
High performance ridge waveguide lasers with (InAs)/sub 1//(GaAS)/sub 2/ short period superlattice (SPS) active layer have been fabricated. A characteristic temperature of 156K is obtained at 1.07 /spl mu/m wavelength.