{"title":"1.07 /spl μ /m (InAs)/sub 1//(GaAs)/sub 2/短周期超晶格应变量子阱脊波导激光器","authors":"H. Kurakake, T. Uchida, H. Soda, S. Yamazaki","doi":"10.1109/ISLC.1992.763639","DOIUrl":null,"url":null,"abstract":"High performance ridge waveguide lasers with (InAs)/sub 1//(GaAS)/sub 2/ short period superlattice (SPS) active layer have been fabricated. A characteristic temperature of 156K is obtained at 1.07 /spl mu/m wavelength.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"1.07 /spl mu/m (InAs)/sub 1//(GaAs)/sub 2/short period superlattice strained quantum well ridge waveguide laser\",\"authors\":\"H. Kurakake, T. Uchida, H. Soda, S. Yamazaki\",\"doi\":\"10.1109/ISLC.1992.763639\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High performance ridge waveguide lasers with (InAs)/sub 1//(GaAS)/sub 2/ short period superlattice (SPS) active layer have been fabricated. A characteristic temperature of 156K is obtained at 1.07 /spl mu/m wavelength.\",\"PeriodicalId\":207712,\"journal\":{\"name\":\"13th IEEE International Semiconductor Laser Conference\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"13th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1992.763639\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"13th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1992.763639","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
1.07 /spl mu/m (InAs)/sub 1//(GaAs)/sub 2/short period superlattice strained quantum well ridge waveguide laser
High performance ridge waveguide lasers with (InAs)/sub 1//(GaAS)/sub 2/ short period superlattice (SPS) active layer have been fabricated. A characteristic temperature of 156K is obtained at 1.07 /spl mu/m wavelength.
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