Remarkable improvement in the temperature characteristics of GaAs Lasers Using an InGaAlP Cladding Layer

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763652

K. Itaya, G. Hatakoshi, Y. Nishikawa, M. Okajima

引用次数: 3

Abstract

A new GaAs laser diode employing InGaAIP for the cadding layer has been successfully fabricated. A large bandgap difference between the GaAs active and the InGaAIP cladding layer reduced the electron overflow, which drasticaly improved the temperature characteristics.

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InGaAlP熔覆层对GaAs激光器温度特性的显著改善

成功地制备了一种采用InGaAIP作为包层的新型砷化镓激光二极管。GaAs活性层与InGaAIP包层之间较大的带隙差减少了电子溢出，从而大大改善了温度特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

13th IEEE International Semiconductor Laser Conference

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