InGaAlP熔覆层对GaAs激光器温度特性的显著改善

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763652

K. Itaya, G. Hatakoshi, Y. Nishikawa, M. Okajima

{"title":"InGaAlP熔覆层对GaAs激光器温度特性的显著改善","authors":"K. Itaya, G. Hatakoshi, Y. Nishikawa, M. Okajima","doi":"10.1109/ISLC.1992.763652","DOIUrl":null,"url":null,"abstract":"A new GaAs laser diode employing InGaAIP for the cadding layer has been successfully fabricated. A large bandgap difference between the GaAs active and the InGaAIP cladding layer reduced the electron overflow, which drasticaly improved the temperature characteristics.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Remarkable improvement in the temperature characteristics of GaAs Lasers Using an InGaAlP Cladding Layer\",\"authors\":\"K. Itaya, G. Hatakoshi, Y. Nishikawa, M. Okajima\",\"doi\":\"10.1109/ISLC.1992.763652\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new GaAs laser diode employing InGaAIP for the cadding layer has been successfully fabricated. A large bandgap difference between the GaAs active and the InGaAIP cladding layer reduced the electron overflow, which drasticaly improved the temperature characteristics.\",\"PeriodicalId\":207712,\"journal\":{\"name\":\"13th IEEE International Semiconductor Laser Conference\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"13th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1992.763652\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"13th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1992.763652","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

成功地制备了一种采用InGaAIP作为包层的新型砷化镓激光二极管。GaAs活性层与InGaAIP包层之间较大的带隙差减少了电子溢出，从而大大改善了温度特性。

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Remarkable improvement in the temperature characteristics of GaAs Lasers Using an InGaAlP Cladding Layer

A new GaAs laser diode employing InGaAIP for the cadding layer has been successfully fabricated. A large bandgap difference between the GaAs active and the InGaAIP cladding layer reduced the electron overflow, which drasticaly improved the temperature characteristics.

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13th IEEE International Semiconductor Laser Conference

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