Low threshold 1.3 /spl mu/m strained-layer Al/sub x/Ga/sub y/ln/sub 1-x-y/As Quantum Well Lasers

Abstract

We demonstrate low threshold 1.3-/spl mu/m lasers using compressive- as well as tensile-strained single Al/sub x/Ga/sub y/ln/sub 1-x-y/As quantum well (100 A/cm2 and 188 A/CM/sup 2/ respectively). Low threshold currents of 2 mA at 25 /spl deg/C and 14 mA at 100 /spl deg/C are achieved for the ridge waveguide lasers.