{"title":"极低阈值1.3/spl μ m应变与晶格匹配量子阱激光器的比较研究","authors":"A. Mathur, J. Osinski, P. Grodzinski, P. Dapkus","doi":"10.1109/ISLC.1992.763556","DOIUrl":null,"url":null,"abstract":"1.3 /spl mu/m quantum well lasers using compressively strained wells have been fabricated with threshold current density as low as 214 A/cm/sup 2/. A comparison with low threshold lattice matched and tensile strained quantum well lasers is presented.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"151 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparative study of extremely low threshold 1.3/spl mu/m strained and lattice matched quantum well lasers\",\"authors\":\"A. Mathur, J. Osinski, P. Grodzinski, P. Dapkus\",\"doi\":\"10.1109/ISLC.1992.763556\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"1.3 /spl mu/m quantum well lasers using compressively strained wells have been fabricated with threshold current density as low as 214 A/cm/sup 2/. A comparison with low threshold lattice matched and tensile strained quantum well lasers is presented.\",\"PeriodicalId\":207712,\"journal\":{\"name\":\"13th IEEE International Semiconductor Laser Conference\",\"volume\":\"151 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"13th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1992.763556\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"13th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1992.763556","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparative study of extremely low threshold 1.3/spl mu/m strained and lattice matched quantum well lasers
1.3 /spl mu/m quantum well lasers using compressively strained wells have been fabricated with threshold current density as low as 214 A/cm/sup 2/. A comparison with low threshold lattice matched and tensile strained quantum well lasers is presented.