Comparative study of extremely low threshold 1.3/spl mu/m strained and lattice matched quantum well lasers

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763556

A. Mathur, J. Osinski, P. Grodzinski, P. Dapkus

引用次数: 0

Abstract

1.3 /spl mu/m quantum well lasers using compressively strained wells have been fabricated with threshold current density as low as 214 A/cm/sup 2/. A comparison with low threshold lattice matched and tensile strained quantum well lasers is presented.

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极低阈值1.3/spl μ m应变与晶格匹配量子阱激光器的比较研究

利用压缩应变阱制备了1.3 /spl μ m量子阱激光器，阈值电流密度低至214 A/cm/sup /。对低阈值晶格匹配和拉伸应变量子阱激光器进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

13th IEEE International Semiconductor Laser Conference

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