High-power AlGaAs lasers with nonabsorbing etched mirrors based on a bent-waveguide structure

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763646

F. Gfeller, P. Buchmann, P. Epperlein, H. Meier, J. Reithmaier

引用次数: 1

Abstract

A nonabsorbing etched mirror structure for AlGaAs SQW-GRINSCH ridge lasers is discussed with respect to mirror coupling coefficient, threshold current penalty, farfield pattern, fourfold catastrophic optical power level improvement, and mirror temperature.

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基于弯曲波导结构的非吸收蚀刻反射镜高功率AlGaAs激光器

讨论了一种用于AlGaAs SQW-GRINSCH脊激光器的非吸收蚀刻镜面结构，包括镜面耦合系数、阈值电流惩罚、远场模式、四倍突变光功率电平提高和镜面温度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

13th IEEE International Semiconductor Laser Conference

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