All-optical modulation of semiconductor laser by using three energy levels in n-doped quantum well

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763599

S. Noda, T. Yamashita, M. Ohya, Y. Muromoto, A. Sasaki

引用次数: 1

Abstract

A new all-optical modulation of semiconductor laser is demonstrated by using three energy levels in n-doped quantum well. It is shown experimentally that the interband-light (semiconductor laser light) can be modulated by the intraband-light (CO/sub 2/ laser light).

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掺n量子阱中三能级半导体激光器的全光调制

利用掺n量子阱中的三个能级，证明了一种新的半导体激光器全光调制方法。实验表明，带内光(CO/sub - 2/激光光)可以调制带间光(半导体激光光)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

13th IEEE International Semiconductor Laser Conference

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