Development of 2.2 /spl mu/m emission ridge waveguide lasers with low threshold GaInAsSb/GaAlAsSb DH wafers

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763571

M. Morosini, J. Herrera-Pérez, A. D. da Silveira, A. V. Von Zuben, M. Loural, N. Patel

引用次数: 0

Abstract

We show that the development of 2.Z/spl mu/m emission low threshold Ridge Waveguide lasers from GaInAsSb/GaAIAsSb DH wafers is limited by the excessive current spread in the low resistivity p-type active layer.

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低阈值GaInAsSb/GaAlAsSb DH晶圆2.2 /spl μ m发射脊波导激光器的研制

我们展示了2的发展。低阻p型有源层中电流扩散过大，限制了GaInAsSb/GaAIAsSb DH晶圆的Z/spl mu/m发射低阈值脊波导激光器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

13th IEEE International Semiconductor Laser Conference

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