CBE grown 1.5 /spl mu/m GaInAsP/InP Surface Emitting Lasers

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763641

T. Uchida, T. Miyamoto, N. Yokouchi, Y. Inaba, F. Koyama, K. Iga

引用次数: 2

Abstract

Two structures of GaInAsP/InP surface emitting laser structures have been demonstrated grown by chemical beam epitaxy (CBE). The threshold current as low as 2.6mA was obtained under 77K cw operation (the lowest cw threshold at 77K). Near room temperature pulsed operation is also achieved using a composite GaInAsP/InP grown mirror.

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CBE生长出1.5 /spl mu/m GaInAsP/InP表面发射激光器

采用化学束外延法(CBE)制备了两种GaInAsP/InP表面发射激光结构。在77K连续波工作下，阈值电流低至2.6mA(最低连续波阈值为77K)。近室温脉冲操作也实现了使用复合GaInAsP/InP生长镜。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

13th IEEE International Semiconductor Laser Conference

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