High-power Al-free buried InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m) Laser Diodes

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763647

D. Garbuzov, N. Y. Antonishkis, N. D. Il'inskaya, S. Zhigulin, N. I. Katsavets, A. Kochergin, V. Z. Pyataev, M. Fuksman

引用次数: 1

Abstract

Al-free InGaAsP/GaAs SCH SQW (/spl lambda/=0.8 /spl mu/m) single-mode buried laser diodEs having parameters comparable with the best achievements for AlGaAs/GaAs diodes have been fabricated for the first time.

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大功率无al埋置InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m)激光二极管

首次制备了无al InGaAsP/GaAs SCH SQW (/spl λ /=0.8 /spl mu/m)单模埋地激光二极管，其参数可与AlGaAs/GaAs二极管的最佳成果相媲美。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

13th IEEE International Semiconductor Laser Conference

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