光抽运370 nm紫外激光形成MQW Cd/ZnS/ZnS应变层超晶格

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763620

Y. Yamada, J. T. Mullins, Y. Masumoto, T. Taguchi

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引用次数: 0

摘要

我们首次展示了一种适合于从宽间隙CdZnS/ZnS多量子阱(MQW)应变层超晶格中注入少量载流子和光抽运受激发射的激光结构。在室温下，激光在375 nm左右发射，阈值功率密度大于100 KW/cm/sup /。研究了注入激光二极管中掺杂I给体的MQW结构。

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Optically pumped 370 nm UV laser form MQW Cd/ZnS/ZnS strained-layer superlattices

We have shown for the first time a laser structure suitable for the injection of minority carriers and optically pumped stimulated emission from widegap CdZnS/ZnS multiple-quantum well (MQW) strained-layer superlattices. Laser emission takes place around 375 nm at room temperature with the threshold power density of above 100 KW/cm/sup 2/. The MQW structure doped with I donor is demonstrated for the injection laser diode.

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13th IEEE International Semiconductor Laser Conference

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