P. Unger, G. Bona, R. Germann, P. Roentgen, D. Webb
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Low-threshold strained GaInP quantum-well ridge lasers with AlGaAs Cladding Layers
Low-threshold strained GalnP quantum well ridge lasers with AlGaAs cladding layers have been fabricated. Due to an electroplated heat spreader the devices can be operated junction-side up at temperatures up to 90//spl deg/C.
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