Optically pumped 370 nm UV laser form MQW Cd/ZnS/ZnS strained-layer superlattices

Abstract

We have shown for the first time a laser structure suitable for the injection of minority carriers and optically pumped stimulated emission from widegap CdZnS/ZnS multiple-quantum well (MQW) strained-layer superlattices. Laser emission takes place around 375 nm at room temperature with the threshold power density of above 100 KW/cm/sup 2/. The MQW structure doped with I donor is demonstrated for the injection laser diode.