H. Nishiguchi, T. Nishimura, E. Ishimura, Y. Nakajima, Y. Kokubo, R. Hirano, M. Aiga
{"title":"用于光学并行数据传输系统的p型衬底上的高均匀10元激光阵列","authors":"H. Nishiguchi, T. Nishimura, E. Ishimura, Y. Nakajima, Y. Kokubo, R. Hirano, M. Aiga","doi":"10.1109/ISLC.1992.763589","DOIUrl":null,"url":null,"abstract":"A 1.3/spl mu/m 10-element monolithic array on the P-type substrate with highly uniform characteristics has been fabricated for the first time. All elements have low threshold currents between 6.2 MA to 6.5 MA, and 12.2 MA to 13.2 MA at 25'C and 60/spl deg/C, respectively.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Highly uniform 10 element laser array on the P-type substrate for the optical parallel data transmission system\",\"authors\":\"H. Nishiguchi, T. Nishimura, E. Ishimura, Y. Nakajima, Y. Kokubo, R. Hirano, M. Aiga\",\"doi\":\"10.1109/ISLC.1992.763589\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1.3/spl mu/m 10-element monolithic array on the P-type substrate with highly uniform characteristics has been fabricated for the first time. All elements have low threshold currents between 6.2 MA to 6.5 MA, and 12.2 MA to 13.2 MA at 25'C and 60/spl deg/C, respectively.\",\"PeriodicalId\":207712,\"journal\":{\"name\":\"13th IEEE International Semiconductor Laser Conference\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"13th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1992.763589\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"13th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1992.763589","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Highly uniform 10 element laser array on the P-type substrate for the optical parallel data transmission system
A 1.3/spl mu/m 10-element monolithic array on the P-type substrate with highly uniform characteristics has been fabricated for the first time. All elements have low threshold currents between 6.2 MA to 6.5 MA, and 12.2 MA to 13.2 MA at 25'C and 60/spl deg/C, respectively.