Characteristics of the laser diode with partially intermixed GaAs/AlGaAs Quantum Well

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763650

Y. Nagai, K. Shigihara, A. Takami, S. Karakida, M. Aiga

引用次数: 0

Abstract

In partially intermixed quantum well laser diode whose shift of bandgap energy is 47.8meV, the threshold current increses only 30% from non-intermixed one and good reliability is confirmed by aging test of 2000 hours at the temperature of 45°C.

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部分混合GaAs/AlGaAs量子阱的激光二极管特性

带隙能量位移为47.8meV的部分掺混量子阱激光二极管，阈值电流仅比未掺混量子阱二极管提高30%，在45℃温度下进行了2000小时的老化试验，证实了良好的可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

13th IEEE International Semiconductor Laser Conference

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