Low-threshold strained GaInP quantum-well ridge lasers with AlGaAs Cladding Layers

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763631

P. Unger, G. Bona, R. Germann, P. Roentgen, D. Webb

引用次数: 14

Abstract

Low-threshold strained GalnP quantum well ridge lasers with AlGaAs cladding layers have been fabricated. Due to an electroplated heat spreader the devices can be operated junction-side up at temperatures up to 90//spl deg/C.

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AlGaAs包层的低阈值应变GaInP量子阱脊激光器

制备了具有AlGaAs包层的低阈值应变GalnP量子阱脊激光器。由于有一个电镀的散热片，这些设备可以在温度高达90//spl℃的情况下工作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

13th IEEE International Semiconductor Laser Conference

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