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2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)最新文献

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Study on copper diffusion barrier materials by Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) 飞行时间二次离子质谱(ToF-SIMS)研究铜扩散阻挡材料
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564266
Yun Wang, H. Teo, Kian Kok Ong, Z. Mo, S. Zhao
{"title":"Study on copper diffusion barrier materials by Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS)","authors":"Yun Wang, H. Teo, Kian Kok Ong, Z. Mo, S. Zhao","doi":"10.1109/IPFA.2016.7564266","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564266","url":null,"abstract":"Copper diffusion in two types of barrier layers (SiNx and SiCNx) in different conditions was investigated. The Cu depth profiles were examined by Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS). Different distributions of Cu in barrier layer were observed. This study aims to understand the mechanism behind in order to select an appropriate barrier material for various applications.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124965900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Failure mechanisms in encapsulated copper wire-bonded devices 封装铜线键合装置的失效机制
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564308
S. Manoharan, Gopal KrishnanRamaswami, F. McCluskey, M. Pecht
{"title":"Failure mechanisms in encapsulated copper wire-bonded devices","authors":"S. Manoharan, Gopal KrishnanRamaswami, F. McCluskey, M. Pecht","doi":"10.1109/IPFA.2016.7564308","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564308","url":null,"abstract":"The cost of gold has increased drastically in the last few years forcing IC manufacturers to switch to copper wire bonding. Copper is used in many plastic-encapsulated devices, but manufacturers are still using the same qualification tests for copper wire-bonded devices as for gold wire-bonded devices, even though damage accumulates differently in these two interconnections, and the failure mechanisms and models are significantly different. To study the damage to the wire, bond shear and pull tests are performed. However, due to the absence of a decapsulation procedure to reveal the ball bond and the wedge bond, these tests are usually performed on non-molded compounds, which does not account for the effect of the molding compound in the failure. To study critical failure mechanisms such as corrosion, wire axial fatigue, and wire bond fatigue, a novel method for wire bond decapsulation was developed, that uses a sequential process, resulting in minimum degradationor, in some cases, no degradation of wire bonds. Previous studies presented decapsulation methods that either revealed the ball bond or the wedge bond separately, but these methods cannot be used to perform wire pull tests. Exposing both the ball bond and the wedge bond is not easy, as the wire tends to break at the loop due to the long exposure time. This paper, describes - a successful decapsulation technique and presents bond shear results for devices with copper wire bonds, thereby permitting studies of encapsulated devices.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122075361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
A method to simulate fluorine outgas and Al bond pad corrosion in wafer fab 一种模拟晶圆厂氟气和铝键垫腐蚀的方法
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564313
Yanjing Yang, Xintong Zhu, R. R. Nistala, S. Zhao, Jinsong Xu
{"title":"A method to simulate fluorine outgas and Al bond pad corrosion in wafer fab","authors":"Yanjing Yang, Xintong Zhu, R. R. Nistala, S. Zhao, Jinsong Xu","doi":"10.1109/IPFA.2016.7564313","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564313","url":null,"abstract":"This paper describes a wafer-level Reliability test methodology for Al bond pad corrosion due to long term wafer storage even in a controlled environment, such as N2 cabinet or vacuum packaged wafer box. The sensitivity of such a reliability test very much depends on how well it captures fluorine contaminant and moisture, the two key determinants of Al pad corrosion. Our test methodology is able to do so by a simple improvised solution to the experimental setup involving a wafer-box which contains quartz-boat mount test wafers. An array of small holes were drilled in the top cover lid of the box so that it can allow moisture from the test chamber to diffuse into the container and at the same time, still trap fluorine outgassed from the test wafer. The accelerated test methodology was successfully used to simulate, in laboratory time-scales, Al pad corrosion due to F-outgas from the pad sidewall polymer residue.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128048770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Dynamic digital modulation thermal measurement for package fault isolation 用于封装故障隔离的动态数字调制热测量
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564236
A. Mohan, W. Qiu, Bernice Zee, R. A. Falk, Tram Pham
{"title":"Dynamic digital modulation thermal measurement for package fault isolation","authors":"A. Mohan, W. Qiu, Bernice Zee, R. A. Falk, Tram Pham","doi":"10.1109/IPFA.2016.7564236","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564236","url":null,"abstract":"This paper describes the use of Dynamic Digital Modulation (DDM) technique for the non-destructive estimation of defect depth in flip chip and stack die packages. The thermal responses of various devices with different defect depths are analyzed using the DDM technique and the thermal rise time data extracted from the thermal signal are used to interpret the defect depth which are validated with Physical Failure Analysis (PFA).","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131164224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Logics of Failure Analysis: 20 Years of rules of the Rue Morgue 失败分析的逻辑:莫尔格街20年的规则
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-01 DOI: 10.1109/IPFA.2016.7564321
G. Mura, M. Vanzi
{"title":"Logics of Failure Analysis: 20 Years of rules of the Rue Morgue","authors":"G. Mura, M. Vanzi","doi":"10.1109/IPFA.2016.7564321","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564321","url":null,"abstract":"The logical rules of Failure Analysis, and their frequent violations are discussed. The joke of comparing Failure Analysis with a crime story, that prompted the seminal paper on 1995 and its follower in 2006, is here more directly explained in terms of good and bad practice.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131400181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Experimental techniques on the understanding of the charge loss in a SONOS nitride-storage nonvolatile memory SONOS氮化存储非易失性存储器中电荷损失的实验研究
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-01 DOI: 10.1109/IPFA.2016.7564243
E. Hsieh, H. T. Wang, S. Chung, W. Chang, S. D. Wang, C. Chen
{"title":"Experimental techniques on the understanding of the charge loss in a SONOS nitride-storage nonvolatile memory","authors":"E. Hsieh, H. T. Wang, S. Chung, W. Chang, S. D. Wang, C. Chen","doi":"10.1109/IPFA.2016.7564243","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564243","url":null,"abstract":"The endurance and charge loss are the most critical issue in the design of a SONOS memory cell. The origin of the window closure and charge loss was partly caused by the electrons and holes mismatch along the channel lateral direction during the cycling. In this paper, two measurement techniques to observe the mismatch of programmed electrons and erased holes have been developed. It was demonstrated on an MTP (Multi-Time-Programming) SONOS flash memory. By observing the charge distribution, the mismatch which led to window closure and charge loss can be well understood, and better operating schemes can then be developed.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127649833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sample preparation technique for the revelation of a semiconductor dopant using an FE-SEM 利用FE-SEM揭示半导体掺杂物的样品制备技术
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-01 DOI: 10.1109/IPFA.2016.7564268
T. Sunaoshi, S. Takeuchi, A. Kamino, M. Sasajima, H. Ito
{"title":"Sample preparation technique for the revelation of a semiconductor dopant using an FE-SEM","authors":"T. Sunaoshi, S. Takeuchi, A. Kamino, M. Sasajima, H. Ito","doi":"10.1109/IPFA.2016.7564268","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564268","url":null,"abstract":"It is challenging to obtain the dopant profile within semiconductor devices with sufficient contrast from FIB milled cross sections due to a damage layer being formed during the milling process. In order to obtain accurate and sufficient dopant profile information, we examined FIB processing conditions and Ar ion milling conditions using a standard sample. As a result, an accelerating voltage of 40 kV for FIB processing and an accelerating voltage of 0.5 kV in Ar ion milling is the most suitable combination for observing a dopant profile clearly. We also applied an optimized preparation protocol to a commercial NMOS sample to demonstrate dopant profile visualization.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126902473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Gate oxide defect localization by using passive voltage contrast with high energy incident beam 利用无源电压对比和高能入射光束定位栅极氧化物缺陷
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-01 DOI: 10.1109/IPFA.2016.7564281
Ming He, Oliver Guo, Sean Wang, Peter Li, Mark Zhang, K. Chien, Xiangfu Zhao
{"title":"Gate oxide defect localization by using passive voltage contrast with high energy incident beam","authors":"Ming He, Oliver Guo, Sean Wang, Peter Li, Mark Zhang, K. Chien, Xiangfu Zhao","doi":"10.1109/IPFA.2016.7564281","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564281","url":null,"abstract":"In this paper, PVC method with high energy incident beam was adopted to locate gate oxide defect, instead of conventional low-energy PVC which has low efficiency and accuracy when the poly gate has large size. Under high-energy condition, the potential difference is obvious and the defect can be easily found.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126262448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel TEM applications to characterize through-silicon vias 表征硅通孔的新型透射电镜应用
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-01 DOI: 10.1109/IPFA.2016.7564267
S. Y. Chen, C. -. Lin, C. Hsieh
{"title":"Novel TEM applications to characterize through-silicon vias","authors":"S. Y. Chen, C. -. Lin, C. Hsieh","doi":"10.1109/IPFA.2016.7564267","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564267","url":null,"abstract":"In this work, three novel TEM methodologies were used to characterize TSVs. First, we utilized the nano-beam diffraction technique to analyze the stress distribution within Si substrates. The keep-out zone can be determined in nano-scale. Second, the hollow-cone dark-field TEM technique was performed to enhance the image contrast of Cu grain features. Third, the TEM/EDS technique was utilized to examine the barrier layer continuity of through silicon TSVs. Both plan-view and cross-sectional view analysis were performed.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130237630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exploration of electromigration and Joule heating effect associated with un-silicided N+ poly 非硅化N+聚合物的电迁移和焦耳热效应探讨
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-01 DOI: 10.1109/IPFA.2016.7564302
X. -. Zhao, M. Zhang, W. Chien
{"title":"Exploration of electromigration and Joule heating effect associated with un-silicided N+ poly","authors":"X. -. Zhao, M. Zhang, W. Chien","doi":"10.1109/IPFA.2016.7564302","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564302","url":null,"abstract":"Electromigration (EM) and Joule heating effect associated with un-silicided (U-S) N+ poly were explored based on 40nm technology node. It is found that void caused by electromigration was formed in the metal over contact which is connected to U-S N+ poly. Joule heating of U-S N+ poly with different sizes and structures was investigated by the method of temperature coefficient of resistance (TCR), and it is found that joule heating may be apparent even with normal current density 0.5mA/um and causes significant effect on EM performance.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124425938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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