Study on copper diffusion barrier materials by Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS)

Abstract

Copper diffusion in two types of barrier layers (SiNx and SiCNx) in different conditions was investigated. The Cu depth profiles were examined by Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS). Different distributions of Cu in barrier layer were observed. This study aims to understand the mechanism behind in order to select an appropriate barrier material for various applications.