利用无源电压对比和高能入射光束定位栅极氧化物缺陷

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-01 DOI:10.1109/IPFA.2016.7564281

Ming He, Oliver Guo, Sean Wang, Peter Li, Mark Zhang, K. Chien, Xiangfu Zhao

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引用次数: 0

摘要

本文采用高能量入射光束PVC法来定位栅极氧化物缺陷，取代了传统的低能量PVC法在大尺寸聚栅极时效率和精度较低的缺点。在高能条件下，电位差明显，缺陷容易被发现。

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Gate oxide defect localization by using passive voltage contrast with high energy incident beam

In this paper, PVC method with high energy incident beam was adopted to locate gate oxide defect, instead of conventional low-energy PVC which has low efficiency and accuracy when the poly gate has large size. Under high-energy condition, the potential difference is obvious and the defect can be easily found.

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2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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