飞行时间二次离子质谱(ToF-SIMS)研究铜扩散阻挡材料

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI:10.1109/IPFA.2016.7564266

Yun Wang, H. Teo, Kian Kok Ong, Z. Mo, S. Zhao

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引用次数: 2

摘要

研究了铜在不同条件下在两种阻挡层(SiNx和SiCNx)中的扩散。利用飞行时间二次离子质谱(ToF-SIMS)分析了铜的深度分布。观察到Cu在阻挡层中的不同分布。本研究旨在了解其背后的机制，以便为各种应用选择合适的屏障材料。

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Study on copper diffusion barrier materials by Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS)

Copper diffusion in two types of barrier layers (SiNx and SiCNx) in different conditions was investigated. The Cu depth profiles were examined by Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS). Different distributions of Cu in barrier layer were observed. This study aims to understand the mechanism behind in order to select an appropriate barrier material for various applications.

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来源期刊

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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