非硅化N+聚合物的电迁移和焦耳热效应探讨

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-01 DOI:10.1109/IPFA.2016.7564302

X. -. Zhao, M. Zhang, W. Chien

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引用次数: 1

摘要

基于40nm技术节点，研究了非硅化(U-S) N+聚合物的电迁移(EM)和焦耳热效应。结果表明，在与U-S - N+聚合物连接的金属触点上方形成了由电迁移引起的空隙。利用电阻温度系数(TCR)方法研究了不同尺寸和结构的U-S - N+聚醚的焦耳加热，发现在0.5mA/um的电流密度下，聚醚的焦耳加热仍然明显，对聚醚的电磁性能有显著影响。

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Exploration of electromigration and Joule heating effect associated with un-silicided N+ poly

Electromigration (EM) and Joule heating effect associated with un-silicided (U-S) N+ poly were explored based on 40nm technology node. It is found that void caused by electromigration was formed in the metal over contact which is connected to U-S N+ poly. Joule heating of U-S N+ poly with different sizes and structures was investigated by the method of temperature coefficient of resistance (TCR), and it is found that joule heating may be apparent even with normal current density 0.5mA/um and causes significant effect on EM performance.

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2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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