2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)最新文献_第2页

High resolution 3D X-ray microscopy for streamlined failure analysis workflow 用于简化故障分析工作流程的高分辨率3D x射线显微镜

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564285

C. Y. Liu, P. S. Kuo, C. Chu, A. Gu, J. Yoon

引用次数: 9

Performance of 7nm stress-engineered nFinFETs based on stressors consideration for different channel material 考虑不同通道材料应力源的7nm应力工程nfinfet性能

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564297

N. A. F. Othman, S. F. Wan Muhammad Hatta, N. Soin

{"title":"Performance of 7nm stress-engineered nFinFETs based on stressors consideration for different channel material","authors":"N. A. F. Othman, S. F. Wan Muhammad Hatta, N. Soin","doi":"10.1109/IPFA.2016.7564297","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564297","url":null,"abstract":"Selecting the material used as the device channel which connects the source to drain region is vital as it will affect the conductivity of the transistor. Recently, germanium was actively used as the diffusion material for source/drain and channel properties mainly for ρ type FinFET, however rarely in η type FinFET. This paper investigates the device performance of 7nm nFinFET for their various types of stressor: channel and source/drain stressor by employing germanium as diffusion materials which indicates the strain applied to the device investigated. It was observed that with the incorporation of germanium inside silicon channel (depending on the ratio of Si1-xGex) and reducing the diffused germanium inside source/drain region, the Id-Vg characteristics seems to be better and shows enhanced performance. It was also observed that the drain current for nFinFET in linear mode can be increased up to 60% with the incorporation of germanium and by increasing the mole fraction of germanium inside source/drain region, the drain current can reduce up to 40% and 30% for silicon and silicon germanium channel respectively. In addition, with only 15%-30% of germanium present inside the source/drain region, the device seems to have a better performance with higher drain current.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131635674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Addressing the sample preparation challenges in failure analysis of wafer level chip scale package mounted inside a customer camera module 解决客户相机模组内晶圆级晶片级封装失效分析中的样品制备挑战

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564264

Jason H. Lagar, Rudolf A. Sia

{"title":"Addressing the sample preparation challenges in failure analysis of wafer level chip scale package mounted inside a customer camera module","authors":"Jason H. Lagar, Rudolf A. Sia","doi":"10.1109/IPFA.2016.7564264","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564264","url":null,"abstract":"One significant application of Wafer Level Chip Scale Package (WLCSP) is in opto-electronics and CCD image processing. This includes cellphone camera module, notebook or computer camera module, video telephone and many more. Its package size represents a real advantage for designers of camera modules and is the ideal choice for highly space-constrained camera applications. One complex part though, is when the WLCSP unit failed during customer electrical testing or in the field. Failure analysis of the failing WLCSP unit mounted inside a camera module will be very challenging. The camera module needs to be opened to gain access on the WLCSP part, demount it and proceed to reballing process to enable further electrical verification and fault isolation analysis. This paper discusses the evaluations done in demounting the WLCSP unit mounted inside a customer camera module. Combinations of thermo-mechanical process and parallel lapping were used to demount the WLCSP unit. The established process enabled the electrical verification, fault isolation and further destructive analysis of WLCSP customer return mounted inside a camera module.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131768192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Reliability and risk assessment from accelerated test result and field modeling: Delamination issue case study for automotive analog parts and sensors 加速测试结果和现场建模的可靠性和风险评估:汽车模拟部件和传感器分层问题案例研究

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564314

C. Bergès, A. Feybesse, W. A. R. Othman

引用次数: 2

Wear-out failure modes and mechanism analysis of self-ballasted LED lamps via after-sale service data 售后服务数据分析自镇流器LED灯的损耗失效模式及机理

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564277

Y. G. Yoon, J. Hyung, U. H. Jeong, S. Chan, J. Jang

引用次数: 0

Fuse trim links physical analysis methodology 熔断器接头物理分析方法

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564256

Andrew C. Sabate, Norazfar Nordin, Benedict Jimenez

引用次数: 1

Imaging of strain from deep trenches using X-Ray Diffraction Imaging (XRDI) x射线衍射成像(XRDI)在深沟应变成像中的应用

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564309

J. Gambino, Y. Watanabe, Y. Kanuma, B. Greenwood, D. Price, A. Suwhanov, S. Hose, O. Whear

引用次数: 3

Logic circuit analysis and TEM inspection of IDDQ logic leakage IDDQ逻辑漏电的逻辑电路分析及TEM检测

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564279

Ang Chung Keow, Yong Foo Khong

引用次数: 0

Failure analysis defect localization of a metal stringer defect on a monolithic step-up DC-DC converter 单片升压DC-DC变换器金属弦缺陷的失效分析及缺陷定位

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564269

Rowin V. Galarce, Francis Nikolai Lupena, Benedict Jimenez, Siew Mei Teo

引用次数: 0

Physical characterization and sample preparation for MEMS devices MEMS器件的物理特性和样品制备

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564263

S. Lee, P. Ang, Z. Mo, S. P. Zhao

引用次数: 2