{"title":"用于简化故障分析工作流程的高分辨率3D x射线显微镜","authors":"C. Y. Liu, P. S. Kuo, C. Chu, A. Gu, J. Yoon","doi":"10.1109/IPFA.2016.7564285","DOIUrl":null,"url":null,"abstract":"High resolution 3D X-ray microscopy is a powerful non-destructive technology to inspect internal failure of IC packages. Here we present a correlative workflow by combining thermal emission microscopy, high resolution 3D X-ray microscopy and dual-beam focused ion beam microscopy to analyze a failed FCBGA package.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"219 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"High resolution 3D X-ray microscopy for streamlined failure analysis workflow\",\"authors\":\"C. Y. Liu, P. S. Kuo, C. Chu, A. Gu, J. Yoon\",\"doi\":\"10.1109/IPFA.2016.7564285\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High resolution 3D X-ray microscopy is a powerful non-destructive technology to inspect internal failure of IC packages. Here we present a correlative workflow by combining thermal emission microscopy, high resolution 3D X-ray microscopy and dual-beam focused ion beam microscopy to analyze a failed FCBGA package.\",\"PeriodicalId\":206237,\"journal\":{\"name\":\"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"219 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2016.7564285\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2016.7564285","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High resolution 3D X-ray microscopy for streamlined failure analysis workflow
High resolution 3D X-ray microscopy is a powerful non-destructive technology to inspect internal failure of IC packages. Here we present a correlative workflow by combining thermal emission microscopy, high resolution 3D X-ray microscopy and dual-beam focused ion beam microscopy to analyze a failed FCBGA package.