Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)最新文献_第5页

CMOS design challenges to power wall CMOS设计面临功率墙的挑战

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984030

T. Kuroda

引用次数: 45

Synchrotron radiation micro lithography and etching (SMILE) for MEMS fabrication 用于MEMS制造的同步辐射微光刻和蚀刻(SMILE)

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984190

S. Sugiyama

引用次数: 6

Field emission from nano-protrusion fabricated using nano-stamp technique 利用纳米印记技术制备纳米突起的场发射

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984157

A. Baba, K. Tsubaki, T. Asano

引用次数: 0

Monte Carlo simulation of substrate photoelectrons in hard X-ray lithography and the effect of buffer layer 硬x射线光刻中衬底光电子的蒙特卡罗模拟及缓冲层的影响

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984130

In-Beom Park, O. Kim

{"title":"Monte Carlo simulation of substrate photoelectrons in hard X-ray lithography and the effect of buffer layer","authors":"In-Beom Park, O. Kim","doi":"10.1109/IMNC.2001.984130","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984130","url":null,"abstract":"Hard X-ray lithography was introduced for 50 nm generation and beyond due to its shorter wavelength and higher resolution than the soft X-ray (Khan et al, 1999). Photoelectron blur increases in hard X-ray lithography because more photo and Auger electrons are generated at the resist-substrate interface and the resist photoabsorption decreases as photon energy increases from soft X-ray to hard X-ray. This blur, due to secondary electrons at the line edge, is considered to cause pattern degradation. In this paper, Monte Carlo simulation of photo and Auger electrons for this harder spectrum of 2.36 keV average energy was carried out based on Murata's model (Murata et al, IEEE Trans. Electron Dev. vol. ED-32, p. 1694, 1985) and the work of Seo et al (J. Vac. Sci. Technol. B vol. 18, no. 6, p. 3349, 2000). Energy loss density and electron trajectories for 200,000 photons were calculated and plotted in a 200 nm thick TDUR-N908 resist on a W and Si substrate without a buffer layer and with buffer layers of various thickness (Si/sub 3/N/sub 4/ and SiO/sub 2/) on a W substrate between resist and substrate. The buffer layers are 10 nm buffer (10 nm Si/sub 3/N/sub 4/), 30 nm buffer (10 nm Si/sub 3/N/sub 4/+20 nm SiO/sub 2/) and 70nm buffer (10 nm Si/sub 3/N/sub 4/+60 nm SiO/sub 2/).","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114774830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characteristics of optical thin film filters containing nanometer-size particles 含有纳米级粒子的光学薄膜滤光片的特性

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984162

S. Nonaka, T. Suda, H. Oda

引用次数: 0

Fabrication of channel waveguides in 2D photonic crystals of Si nanopillars 硅纳米柱二维光子晶体中通道波导的制备

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984202

T. Tada, V. Poborchii, T. Kanayama

引用次数: 0

Approaching to chemical stability of embedded material for attenuated phase-shifting mask and application of high transmittance AttPSM for sub-0.1 /spl mu/m contact hole pattern in 193 nm lithography 衰减相移掩模埋入材料的化学稳定性探讨及193nm光刻中0.1 /spl μ m以下接触孔模式高透射率AttPSM的应用

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984128

Cheng‐Ming Lin

引用次数: 0

Preparation of thick PZT film by electrostatic spray deposition (ESD) for the application in micro-system technology 应用静电喷涂沉积(ESD)制备厚PZT薄膜用于微系统技术

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984159

Jian Lu, J. Chu, Wenhao Huang, Zhimin Ping

引用次数: 1

Analysis of resist LER for the patterns replicated by proximity X-ray lithography 近距离x射线光刻复制图案的抗蚀剂LER分析

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984192

Y. Kikuchi, T. Taguchi, H. Matsunaga

引用次数: 0

Resolution of 1:1 electron stepper lithography based on patterned cold cathode 基于图案化冷阴极的1:1电子步进光刻分辨率

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984061

H. Hongo, Y. Ochiai, H. Kawaura

引用次数: 0