Resolution of 1:1 electron stepper lithography based on patterned cold cathode

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI:10.1109/IMNC.2001.984061

H. Hongo, Y. Ochiai, H. Kawaura

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Abstract

Feasibility of 1:1 electron stepper lithography based on a patterned cold cathode is investigated. The beam spread of electrons emitted from a metal-insulator-semiconductor (MIS) cold cathode was estimated to be approximately 23 nm. Therefore, the electron stepper lithography method should achieve a resolution below 50 nm.

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基于图案化冷阴极的1:1电子步进光刻分辨率

研究了基于图案化冷阴极的1:1电子步进光刻技术的可行性。从金属-绝缘体-半导体(MIS)冷阴极发射的电子束扩散估计约为23 nm。因此，电子步进光刻方法应达到50 nm以下的分辨率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

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