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Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)最新文献

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Ultra fine multi-line patterning based on sidewall patterning technique 基于侧壁图案技术的超精细多线图案
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984152
Kyung-Hoon Chung, Suk-kang Sung, J. Lee, Byung-Gook Park
{"title":"Ultra fine multi-line patterning based on sidewall patterning technique","authors":"Kyung-Hoon Chung, Suk-kang Sung, J. Lee, Byung-Gook Park","doi":"10.1109/IMNC.2001.984152","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984152","url":null,"abstract":"A patterning technique to define nanoscale multiple lines is developed and optimized using sidewall structure. In this experiment, sidewall multi-line patterning technique makes it possible to realize about 50nm poly-Si lines which have 70nm as the narrowest space. This technique is a proximity effect free fabrication process, so it is expected that the sidewall multi-line patterning technique can be applied to fabricate single electron devices, quantum devices, and other nanoscale devices.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115006155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effects of doping methods on characteristics of InAs quantum dots 掺杂方式对InAs量子点特性的影响
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984149
Young Min Park, Young Ju Park, Kwang Moo Kim, Jae-Hyek Shin, E. Kim, M. Son, S. Hwang, K. Yoo
{"title":"Effects of doping methods on characteristics of InAs quantum dots","authors":"Young Min Park, Young Ju Park, Kwang Moo Kim, Jae-Hyek Shin, E. Kim, M. Son, S. Hwang, K. Yoo","doi":"10.1109/IMNC.2001.984149","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984149","url":null,"abstract":"We compared the effects of two different doping methods on electronic states of self-assembled InAs quantum dots using photoluminescence and C-V spectroscopy. Analytical interpretation will be presented in conjunction with the experimental data.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116775537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Easy removal of mold for imprint lithography by ion beam modification of photoresist surface 通过离子束修饰光刻胶表面，轻松去除压印模
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984106
A. Baba, M. Iwamoto, K. Tsubaki, T. Asano
{"title":"Easy removal of mold for imprint lithography by ion beam modification of photoresist surface","authors":"A. Baba, M. Iwamoto, K. Tsubaki, T. Asano","doi":"10.1109/IMNC.2001.984106","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984106","url":null,"abstract":"We have found that ion beam modification of the novolac photoresist surface is very effective in removing mold in NIL. Using this process, step-and-repeat pattern transfer becomes possible. In addition, this process can increase the imprint depth.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121098723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New AFM imaging for high aspect structures: STI and contact holes 新AFM成像的高纵横结构:STI和接触孔
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984181
T. Morimoto, H. Kuroda, Y. Minomoto, Y. Nagano, Y. Kembo, S. Hosaka
{"title":"New AFM imaging for high aspect structures: STI and contact holes","authors":"T. Morimoto, H. Kuroda, Y. Minomoto, Y. Nagano, Y. Kembo, S. Hosaka","doi":"10.1109/IMNC.2001.984181","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984181","url":null,"abstract":"New AFM imaging technique (step-in mode) has been developed to remove the friction or torsion against the probe caused by xy scanning under the constant gap control. As experimental results show, this method can observe STI structure faithfully by high aspect ratio probe with less damage. We conclude that the step-in mode proposed in this paper is useful for in-line evaluation of STI structure.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122871328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tunable fiber Bragg grating combined with twisting microactuator 可调谐光纤布拉格光栅与扭转微致动器的组合
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984067
M. Sasaki, K. Miura, K. Hane
{"title":"Tunable fiber Bragg grating combined with twisting microactuator","authors":"M. Sasaki, K. Miura, K. Hane","doi":"10.1109/IMNC.2001.984067","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984067","url":null,"abstract":"In this study, a tunable fiber Bragg grating (FBG) is test-developed by combining the FBG with the twisting microactuator. The electro-magnetic type actuator is used for tuning the Bragg wavelength.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123002209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new PSM system: SCAAM with Phase Phirst! 一个新的PSM系统:SCAAM与相位第一!
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984032
M. Levenson, T. Ebihara, S. Desai, S. White
{"title":"A new PSM system: SCAAM with Phase Phirst!","authors":"M. Levenson, T. Ebihara, S. Desai, S. White","doi":"10.1109/IMNC.2001.984032","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984032","url":null,"abstract":"The Sidewall Chrome Alternating Aperture Mask (SCAAM), a next generation alternating Phase Shift Mask (alt-PSM) structure, has printed 70 nm semi-dense lines and offers the potential for low cost 100 nm imaging with 248 nm light. The SCAAM reticle production process etches the phase topography first and then forms transparent openings to define the image in a conformal chrome layer deposited afterwards. The Phase Phirst! system employs ready-to-write SCAAM blanks with regular pre-patterned surface topography, chrome and resist, eliminating the cost of writing a custom phase pattern on every plate. To use this type of mask, circuit designers would have to place every near-minimum-sized circuit feature (e.g.. gate) at a predefined phase-step location. Interconnections and larger features would be defined using the trim mask.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126225019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Next generation dielectric etching technology 新一代介电蚀刻技术
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984056
M. Sekine
{"title":"Next generation dielectric etching technology","authors":"M. Sekine","doi":"10.1109/IMNC.2001.984056","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984056","url":null,"abstract":"To develop and fabricate devices with a design rule below 100 nm in the SOC (System-On-a-Chip) era, we need a systematic methodology for process development and qualification. We also need an etch tool that is well-defined, and equipped with monitors. It must also have controlling software based on the scientific understanding of reactive plasma and of etch reactions. This tool will make possible the concurrent development of devices and their production processes with a quick TAT (Turn Around Time). One of the critical issues for future device manufacturing is high-aspect-ratio-pattern etching of ILD (Inter-Layer Dielectric materials), such as SiO/sub 2/ and low-k materials, using a CF (fluorocarbon) plasma. ASET Plasma Technology Laboratory adopted this CF plasma etching of SiO/sub 2/ and conducted a research project to understand the etch mechanism and to establish a basis for a systematic methodology, monitors, and modeling tools. It finished the mission successfully at the end of March 2001. This paper reviews the project and discusses about future plasma etching technologies.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130426772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The surface treatment with NH/sub 3/ for GaN grown by a sublimation technique 用nh3 /sub /对升华法生长的氮化镓进行表面处理
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984167
Hyunjae Lee, S. Lee, S. Min, J. Lyou, Seong-Ju Park
{"title":"The surface treatment with NH/sub 3/ for GaN grown by a sublimation technique","authors":"Hyunjae Lee, S. Lee, S. Min, J. Lyou, Seong-Ju Park","doi":"10.1109/IMNC.2001.984167","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984167","url":null,"abstract":"We have applied surface treatment with ammonia to laterally grown GaN. The technique of sublimation was used for the bulk growth of GaN at a temperature of 1080°C, with a reacting gas consisting of NH/sub 3/ and N/sub 2/, on a substrate of metalorganic chemical vapor deposited GaN film/sapphire. With the surface treatment, the laterally grown GaN appears to have an improved surface and structure: cracks are conspicuously reduced as observed with a UV-microscope and crystal uniformity is increased as shown by X-ray diffraction.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131655643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Micro-structuring of SiO/sub 2/ thin film on Si by a femto-second laser pulse 飞秒激光脉冲在Si上微结构SiO/ sub2 /薄膜
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984146
K. Kawamura, N. Ito, M. Hirano, H. Hosono
{"title":"Micro-structuring of SiO/sub 2/ thin film on Si by a femto-second laser pulse","authors":"K. Kawamura, N. Ito, M. Hirano, H. Hosono","doi":"10.1109/IMNC.2001.984146","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984146","url":null,"abstract":"In this paper report that micro-grating structures are holographically encoded in SiO/sub 2/ thin films on Si by colliding a pair of pulses split from a single high peak power fs-laser pulse using a Ti:sapphire laser.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130809306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of 3-D focused-ion-beam (FIB) etching methods for nano- and micro-technology application 三维聚焦离子束(FIB)蚀刻技术在纳米和微技术中的应用
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984055
S. Kim, T. Yamashita, K. Lee, M. Nagao, M. Sato, H. Maeda
{"title":"Development of 3-D focused-ion-beam (FIB) etching methods for nano- and micro-technology application","authors":"S. Kim, T. Yamashita, K. Lee, M. Nagao, M. Sato, H. Maeda","doi":"10.1109/IMNC.2001.984055","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984055","url":null,"abstract":"We have developed a 3-D FIB etching method for making 3-D micro-devices and sensors based on nano- and micro-technology. We fabricated single electron tunneling (SET) devices on a Bi-2201 single crystal whisker. We also describe 3-D FIB etching methods using layered single crystal whiskers as examples. These methods offer simple in situ etching and evaporation processes in FIB systems for making a micro area of stacks.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132436404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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