A new PSM system: SCAAM with Phase Phirst!

M. Levenson, T. Ebihara, S. Desai, S. White
{"title":"A new PSM system: SCAAM with Phase Phirst!","authors":"M. Levenson, T. Ebihara, S. Desai, S. White","doi":"10.1109/IMNC.2001.984032","DOIUrl":null,"url":null,"abstract":"The Sidewall Chrome Alternating Aperture Mask (SCAAM), a next generation alternating Phase Shift Mask (alt-PSM) structure, has printed 70 nm semi-dense lines and offers the potential for low cost 100 nm imaging with 248 nm light. The SCAAM reticle production process etches the phase topography first and then forms transparent openings to define the image in a conformal chrome layer deposited afterwards. The Phase Phirst! system employs ready-to-write SCAAM blanks with regular pre-patterned surface topography, chrome and resist, eliminating the cost of writing a custom phase pattern on every plate. To use this type of mask, circuit designers would have to place every near-minimum-sized circuit feature (e.g.. gate) at a predefined phase-step location. Interconnections and larger features would be defined using the trim mask.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.2001.984032","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The Sidewall Chrome Alternating Aperture Mask (SCAAM), a next generation alternating Phase Shift Mask (alt-PSM) structure, has printed 70 nm semi-dense lines and offers the potential for low cost 100 nm imaging with 248 nm light. The SCAAM reticle production process etches the phase topography first and then forms transparent openings to define the image in a conformal chrome layer deposited afterwards. The Phase Phirst! system employs ready-to-write SCAAM blanks with regular pre-patterned surface topography, chrome and resist, eliminating the cost of writing a custom phase pattern on every plate. To use this type of mask, circuit designers would have to place every near-minimum-sized circuit feature (e.g.. gate) at a predefined phase-step location. Interconnections and larger features would be defined using the trim mask.
一个新的PSM系统:SCAAM与相位第一!
侧壁铬交替孔径掩模(SCAAM)是下一代交替相移掩模(alt-PSM)结构,已经打印了70纳米的半密线,并提供了低成本的潜力,在248纳米的光下进行100纳米成像。SCAAM光刻线生产工艺首先蚀刻相形貌,然后形成透明开口,在随后沉积的共形铬层中定义图像。阶段第一!系统采用可写的SCAAM空白,具有规则的预图案表面形貌,铬和抗蚀剂,消除了在每个板上编写定制相位图案的成本。要使用这种类型的掩模,电路设计人员必须放置每个接近最小尺寸的电路特征(例如…门)在预定义的相位步进位置。互连和更大的特征将使用修剪掩码定义。
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