Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)最新文献_第2页

Nano-electronics in a multiwall carbon nanotube 多壁碳纳米管中的纳米电子学

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984198

K. Tsukagoshi, A. Kanda, N. Yoneya, E. Watanabe, Y. Ootuka, Y. Aoyagi

{"title":"Nano-electronics in a multiwall carbon nanotube","authors":"K. Tsukagoshi, A. Kanda, N. Yoneya, E. Watanabe, Y. Ootuka, Y. Aoyagi","doi":"10.1109/IMNC.2001.984198","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984198","url":null,"abstract":"Multiwall carbon nanotubes (MWNTs) are one of natural nano-size bricks. The MWNTs are conductive narrow wires, and would be useful materials for a component of nano-electronics. By building up the MWNT bricks, nano-scale device structures, which cannot be fabricated from three dimensional bulk materials, can be constructed. For the application of carbon nanotubes to molecular electronic devices, it is very important to control the contact resistance between metal and a nanotube. In order to get information on the origin of contact resistance, we have studied material dependence of the electrical transport in metal/MWNT/metal structure in metal-on-tube configuration. Furthermore, for the device construction, the nano-bricks need to be cut to fit to designed structures. We demonstrated an etching process to cut the MWNTs into three pieces for a single-electron transistor (SET). The SET is a useful device to show that the constructed structure has an expected small element. In the MWNT-SET, we observed the Coulomb blockade effect with island capacitance of 4.2 aF at 4.5 K. The observed Coulomb blockade effect meant a quite small island was formed in the MWNT.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114847519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Image formation by continuous writing with multi-beam in X-ray nanolithography x射线纳米光刻中多光束连续书写成像

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984129

E. Toyota, M. Washio

{"title":"Image formation by continuous writing with multi-beam in X-ray nanolithography","authors":"E. Toyota, M. Washio","doi":"10.1109/IMNC.2001.984129","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984129","url":null,"abstract":"Difficulties in X-ray lithography are now condensed into mask related matters. Since the exposure mode is basically 1:1, more strict accuracy is requested for mask fabrication than for the final images. Mask fabrication technology has made remarkable progress, and image formation of 70 nm line width was reported recently (Miyatake et al, 2001). Meanwhile, pattern reduction necessitates narrowing gaps between mask and wafer, since the gaps decrease in proportion to the square of the line width. If we want to form 25-35 nm two-dimensional patterns in future, mask-wafer gaps of 2-4 μm are needed; it is impractical. Therefore, around 50-70 nm image forming has been considered as the limits of X-ray lithography. Recently, three types of X-ray mask were proposed which enable 25-35 nm image formation while keeping a practical proximity gap >8 μm. The first is enlarged pattern masks (EPMs), applying a line-narrowing effect by edge diffraction. The second is interference slit masks (ISMs), which form design images by interference effect from the slits of the mask. The third is focusing x-ray masks (FXMs), which form an array of concave lenses using the absorbing materials on the mask membrane. These masks, which reduce mask patterns partially (PRMs: partially reducing masks), relieve the limitation of the proximity gaps. In this article, we discuss the design of the masks, beamlines and procedures of writing for 25 nm image formations.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126197383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fluoropolymer platforms for 157 nm resist applications 用于157纳米抗蚀应用的含氟聚合物平台

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984193

H. Ito, G. Wallraff, N. Fender, P. Brock, H. Truong, C. Larson, B. D. Allen

引用次数: 0

Phase shifting interferometer for the characterization of nanodevices 用于纳米器件表征的相移干涉仪

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984182

P. Boher, J. Piel, J. Stehle, A. Dubois, A. Boccara

引用次数: 1

Design and fabrication of 1D and 2D micro scanners actuated by double layered PZT bimorph beams 双层PZT双晶束驱动一维和二维微扫描仪的设计与制造

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984161

J. Tsaur, Lulu Zhang, R. Maeda, S. Matsumoto, S. Khumpuang, J. Wan

引用次数: 2

A fast and simplified technique of proximity effect correction for ULSI patterns in electron-beam projection lithography 一种快速简化的电子束投影光刻ULSI图形接近效应校正技术

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984185

K. Ogino, H. Hoshino, Y. Machida, M. Osawa, K. Takahashi, H. Arimoto

引用次数: 2

Accuracy evaluation of point diffraction interferometer for EUVL mirror EUVL镜面点衍射干涉仪精度评价

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984203

K. Otaki, K. Ota, T. Yamamoto, Y. Fukuda, I. Nishiyama, S. Okazaki

引用次数: 3

Hydrogen diffusion into the bulk at nearly ideal H-terminated region on Si[100] surfaces 氢在Si[100]表面接近理想的h端区向体内扩散

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984119

Zhi-Hong Wang, H. Noda, Y. Nonogaki, T. Urisu

引用次数: 0

DNA melting analysis on a microchip after PCR amplification PCR扩增后在微芯片上的DNA熔化分析

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984156

M. Slyadnev, K. Sato, M. Tokeshi, T. Kitamori

引用次数: 0

Implementation of phase shift focus monitor under modified illumination [photolithography] 改进照明下相移焦点监控的实现[光刻]

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984033

S. Nakao, Y. Miyamoto, S. Maejima, A. Ueno, S. Yamashita, J. Miyazaki, A. Tokui, K. Tsujita, I. Arimoto

引用次数: 0