A fast and simplified technique of proximity effect correction for ULSI patterns in electron-beam projection lithography

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI:10.1109/IMNC.2001.984185

K. Ogino, H. Hoshino, Y. Machida, M. Osawa, K. Takahashi, H. Arimoto

引用次数: 2

Abstract

We have proposed a proximity effect correction algorithm using the pattern shape modification method and the interior area removal method, and have applied this algorithm to ULSI patterns.

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一种快速简化的电子束投影光刻ULSI图形接近效应校正技术

我们提出了一种基于图形形状修正法和内部区域去除法的接近效应校正算法，并将该算法应用于ULSI图形。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

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