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Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)最新文献

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Prototype of micro flow cell for multi-analyte sandwich immunoassay 用于多分析物夹心免疫分析的微流细胞原型
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984048
N. Honda, S. Shoji, M. Isomura, Y. Ashihara, K. Akahori, H. Sato
{"title":"Prototype of micro flow cell for multi-analyte sandwich immunoassay","authors":"N. Honda, S. Shoji, M. Isomura, Y. Ashihara, K. Akahori, H. Sato","doi":"10.1109/IMNC.2001.984048","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984048","url":null,"abstract":"A micro flow cell for sandwich immunoassay using Teflon (Asahi Glass Co.: CYTOP/sup TM/) check valves for sample and reagent inlets is designed and fabricated. The check valves are used not only to prevent reverse flow of injected solutions but also to realize sequential injection of the sample and reagent by simple pressure control. The valve structure is designed to control the width and thickness of the sample and reagent flows at relatively small flow velocity that is useful to reduce effective sample and reagent volumes. We examined a fluorescent sandwich immunoassay for human AFP (/spl alpha/-fetoprotein) as a preliminary experiment and faster immunoassay within 30 min compared to the conventional one was realized in the micro flow cell.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123424834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of low energy e-beam proximity projection lithography: LEEPL 低能电子束接近投影光刻技术的发展
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984057
N. Shimazu
{"title":"Development of low energy e-beam proximity projection lithography: LEEPL","authors":"N. Shimazu","doi":"10.1109/IMNC.2001.984057","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984057","url":null,"abstract":"LEEPL (Low Energy Electron Beam Proximity Projection Lithography) is proposed as a solution to the current cost issues in the semiconductor industry. Thanks to a simple tool configuration and small mask pattern area, LEEPL promises both tools and masks to be low cost. The author deals with mask issues, describes the proof of concept and the next step, and discusses the formation of an LEEPL consortium.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"458 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124904676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Studies on the possibility of highly sensitive PMMA based chemically amplified resists for EB and X-ray lithography 电子束和x射线光刻用高灵敏度PMMA基化学放大抗蚀剂的可能性研究
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984177
A. Nakano, K. Okamoto, T. Kozawa, S. Tagawa
{"title":"Studies on the possibility of highly sensitive PMMA based chemically amplified resists for EB and X-ray lithography","authors":"A. Nakano, K. Okamoto, T. Kozawa, S. Tagawa","doi":"10.1109/IMNC.2001.984177","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984177","url":null,"abstract":"Protons and negative species generated by ionizing irradiation make PMMA matrices sensitive because of electron and proton transfer. These facts imply the possibility to develop a highly sensitive PMMA based chemically amplified resists for EB and X-ray lithography.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126953047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Control of the positioning of self-assembling Si quantum dots on ultrathin SiO/sub 2//c-Si by using scanning probe 利用扫描探针控制超薄SiO/sub /c-Si上自组装Si量子点的定位
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984199
M. Ikeda, R. Takaoka, S. Sugioka, S. Miyazaki, M. Hirose
{"title":"Control of the positioning of self-assembling Si quantum dots on ultrathin SiO/sub 2//c-Si by using scanning probe","authors":"M. Ikeda, R. Takaoka, S. Sugioka, S. Miyazaki, M. Hirose","doi":"10.1109/IMNC.2001.984199","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984199","url":null,"abstract":"In this paper, we demonstrate two different techniques for the positioning of reactive sites for self-assembling Si dots in LPCVD. In the one way, nanometer-scale modification of the initial SiO/sub 2/ surface before LPCVD is made by using the tip of a scanning tunneling microscope (STM) in low pressure H/sub 2/ ambient. The other method is based on the surface modification of SiO/sub 2/ using an electrically-active atomic force microscope (AFM) probe.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122387132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
EPL proximity and Coulomb effect correction by mask bias method 用掩模偏置法校正EPL接近度和库仑效应
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984137
H. Kobinata, Y. Yamada, T. Tamura, K. Fujii, O. Shinbo, H. Nozue
{"title":"EPL proximity and Coulomb effect correction by mask bias method","authors":"H. Kobinata, Y. Yamada, T. Tamura, K. Fujii, O. Shinbo, H. Nozue","doi":"10.1109/IMNC.2001.984137","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984137","url":null,"abstract":"The mask bias method has proved to be a suitable method for EPL proximity effect correction. However, the linewidth reduction ratio due to the backscattering energy changes if the beam blur of the pattern changes. When the beam blur due to the Coulomb interaction effect in the sub-field is not uniform, the value of the mask bias should be modified. In this paper, we discuss the proximity effect correction method, considering the Coulomb interaction distribution in the sub-field.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121338770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-brightness semiconductor lasers fabricated with improved dry-etching technology for ultra-smooth laser facets 采用改进的干蚀刻技术制备高亮度半导体激光器，用于超光滑激光切面
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984168
E. Deichsel, P. Unger
{"title":"High-brightness semiconductor lasers fabricated with improved dry-etching technology for ultra-smooth laser facets","authors":"E. Deichsel, P. Unger","doi":"10.1109/IMNC.2001.984168","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984168","url":null,"abstract":"An improved dry-etching process has been developed for the fabrication of semiconductor laser diodes with dry-etched resonator mirrors. This technique offers lots of new applications, e.g. the fabrication of unstable-resonator lasers and monolithic optoelectronic integration. However, there are strict requirements for the quality of the dry-etched laser mirrors. The fabrication method of these facets includes two steps, the fabrication of a suitable etch mask and the mirror etching process itself.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132409949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A new inspection method for PSM on DUV inspection light source 基于DUV检测光源的PSM检测新方法
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984070
I. Isomura, H. Tsuchiya, S. Sugihara, K. Yamashita, M. Tabata
{"title":"A new inspection method for PSM on DUV inspection light source","authors":"I. Isomura, H. Tsuchiya, S. Sugihara, K. Yamashita, M. Tabata","doi":"10.1109/IMNC.2001.984070","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984070","url":null,"abstract":"For the 130 nm generation, the Phase Shift Mask (PSM) is expected to be widely used. Moreover, demand for higher transmission PSM is increasing and a mask inspection system with high detection sensitivity for these masks is also required. In this paper, a new inspection method to improve defect detection sensitivity for a PSM in the DUV inspection system is discussed.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130755386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Holographic grating formation by wet etching in amorphous As/sub 40/Ge/sub 10/Se/sub 15/S/sub 30/ thin film 非晶As/sub 40/Ge/sub 10/Se/sub 15/S/sub 30/薄膜湿法刻蚀全息光栅
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984166
Jong-Hwa Park, Jeong-Il Park, H. Chung
{"title":"Holographic grating formation by wet etching in amorphous As/sub 40/Ge/sub 10/Se/sub 15/S/sub 30/ thin film","authors":"Jong-Hwa Park, Jeong-Il Park, H. Chung","doi":"10.1109/IMNC.2001.984166","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984166","url":null,"abstract":"Amorphous As/sub 40/Ge/sub 10/Se/sub 15/S/sub 30/ thin films have been studied with the aim of identifying optimum etching conditions that can be used to produce holographic grating structure for use as diffractive optical elements. In this study, we have fabricated a holographic grating with the method of wet etching using 0.26N NaOH. The diffraction efficiency was obtained by +1st order intensity of the diffracted beam. The formed grating profiles were observed by an atomic force microscope and showed that the expected grating profile could be achieved by controlling the etching time.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128335328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Si single-electron CCD 硅单电子CCD
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984197
A. Fujiwara, K. Yamazaki, Y. Takahashi
{"title":"Si single-electron CCD","authors":"A. Fujiwara, K. Yamazaki, Y. Takahashi","doi":"10.1109/IMNC.2001.984197","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984197","url":null,"abstract":"A charge-coupled device (CCD) that can manipulate single electrons (holes) was fabricated and found to operate successfully. We demonstrated that the fabricated device can transfer a single hole and also detect its position by a novel charge sensing method based on the electron-hole system in a Si quantum wire. This was the first demonstration of manipulating an elementary charge in Si.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131983555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Simulation of light scatter from defects in EUV mask blanks EUV掩模毛坯缺陷光散射模拟
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984093
M. Ito, T. Ogawa, I. Nishiyama, S. Okazaki
{"title":"Simulation of light scatter from defects in EUV mask blanks","authors":"M. Ito, T. Ogawa, I. Nishiyama, S. Okazaki","doi":"10.1109/IMNC.2001.984093","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984093","url":null,"abstract":"Using light scatter simulations, we have predicted the PSL-equivalent sensitivity needed for mask blank inspection. The simulation procedure has two steps. First, the electromagnetic field scattered off a feature is calculated by solving Maxwell's equations with a time-domain finite-element method. Then, the resultant near field is extrapolated to the far field using the Kirchhoff diffraction formula. We performed two-dimensional simulations at a wavelength of 488 nm (Ar laser). The mask blank is illuminated by an s-polarized plane wave at normal incidence. We also discuss the angular distribution of scattered intensity, as well as the effects of incident angle and wavelength on light scattering.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133332361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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