利用扫描探针控制超薄SiO/sub /c-Si上自组装Si量子点的定位

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI:10.1109/IMNC.2001.984199

M. Ikeda, R. Takaoka, S. Sugioka, S. Miyazaki, M. Hirose

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引用次数: 0

摘要

在本文中，我们展示了两种不同的技术来定位LPCVD中自组装Si点的反应位点。一方面，利用扫描隧道显微镜(STM)尖端在低压H/亚2/环境下对LPCVD前初始SiO/亚2/表面进行纳米级改性;另一种方法是利用电活性原子力显微镜(AFM)探针对SiO/ sub2 /进行表面改性。

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Control of the positioning of self-assembling Si quantum dots on ultrathin SiO/sub 2//c-Si by using scanning probe

In this paper, we demonstrate two different techniques for the positioning of reactive sites for self-assembling Si dots in LPCVD. In the one way, nanometer-scale modification of the initial SiO/sub 2/ surface before LPCVD is made by using the tip of a scanning tunneling microscope (STM) in low pressure H/sub 2/ ambient. The other method is based on the surface modification of SiO/sub 2/ using an electrically-active atomic force microscope (AFM) probe.

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Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

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