Si single-electron CCD

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI:10.1109/IMNC.2001.984197

A. Fujiwara, K. Yamazaki, Y. Takahashi

引用次数: 2

Abstract

A charge-coupled device (CCD) that can manipulate single electrons (holes) was fabricated and found to operate successfully. We demonstrated that the fabricated device can transfer a single hole and also detect its position by a novel charge sensing method based on the electron-hole system in a Si quantum wire. This was the first demonstration of manipulating an elementary charge in Si.

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硅单电子CCD

制作了一种能操纵单电子(空穴)的电荷耦合器件(CCD)，并成功运行。我们证明了该装置可以转移单孔，并通过一种基于硅量子线中电子-空穴系统的新型电荷传感方法检测其位置。这是第一次在硅中操纵基本电荷的演示。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

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