Studies on the possibility of highly sensitive PMMA based chemically amplified resists for EB and X-ray lithography

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI:10.1109/IMNC.2001.984177

A. Nakano, K. Okamoto, T. Kozawa, S. Tagawa

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Abstract

Protons and negative species generated by ionizing irradiation make PMMA matrices sensitive because of electron and proton transfer. These facts imply the possibility to develop a highly sensitive PMMA based chemically amplified resists for EB and X-ray lithography.

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电子束和x射线光刻用高灵敏度PMMA基化学放大抗蚀剂的可能性研究

电离辐照产生的质子和负电荷使PMMA基质具有电子和质子转移的敏感性。这些事实意味着有可能开发出一种高灵敏度的基于聚甲基丙烯酸甲酯的化学放大抗蚀剂，用于电子束光刻和x射线光刻。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

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