Development of low energy e-beam proximity projection lithography: LEEPL

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI:10.1109/IMNC.2001.984057

N. Shimazu

引用次数: 0

Abstract

LEEPL (Low Energy Electron Beam Proximity Projection Lithography) is proposed as a solution to the current cost issues in the semiconductor industry. Thanks to a simple tool configuration and small mask pattern area, LEEPL promises both tools and masks to be low cost. The author deals with mask issues, describes the proof of concept and the next step, and discusses the formation of an LEEPL consortium.

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低能电子束接近投影光刻技术的发展

低能量电子束邻近投影光刻技术(LEEPL)是解决当前半导体行业成本问题的一种方法。由于工具配置简单，蒙版面积小，LEEPL承诺工具和蒙版的成本都很低。作者处理掩码问题，描述了概念的证明和下一步，并讨论了LEEPL联盟的形成。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

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