Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)最新文献

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Lens fabrication on optical fiber end using photolithography 光纤端用光刻技术制造透镜
M. Sasaki, T. Ando, S. Nogawa, K. Hane
{"title":"Lens fabrication on optical fiber end using photolithography","authors":"M. Sasaki, T. Ando, S. Nogawa, K. Hane","doi":"10.1109/IMNC.2001.984187","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984187","url":null,"abstract":"New photolithography techniques for fabricating the lens on the optical fiber end are developed and the promising results are obtained.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121061718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Mo/Si multilayers with different barrier layers for applications as EUV mirrors 具有不同阻挡层的Mo/Si多层用于EUV反射镜
S. Braun, H. Mai, M. Moss, R. Scholz
{"title":"Mo/Si multilayers with different barrier layers for applications as EUV mirrors","authors":"S. Braun, H. Mai, M. Moss, R. Scholz","doi":"10.1109/IMNC.2001.984103","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984103","url":null,"abstract":"Pulsed laser deposition (PLD) and magnetron sputter deposition have been used to prepare different types of Mo/Si multilayers for the EUV spectral range, First of all, the pure Mo/Si system without any additional components has been investigated. The different growth mechanisms of the layers induced by the alternative deposition methods are discussed and the resulting reflectivities and microstructures are compared. Various materials (e.g. C, B/sub 4/C, Ag, W) were tested as barrier layers at the Mo-Si interface. We have investigated their influence on reflectivity and morphology of the resulting multilayer structures.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115887312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Thickness measurements of ultra-thin films using AFM 利用原子力显微镜测量超薄薄膜厚度
T. Kim, H. Kwon, J. Lee, Byung-Gook Park
{"title":"Thickness measurements of ultra-thin films using AFM","authors":"T. Kim, H. Kwon, J. Lee, Byung-Gook Park","doi":"10.1109/IMNC.2001.984179","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984179","url":null,"abstract":"Proposes a new method that can measure the thickness of thin films regardless of the kinds of samples using AFM (atomic force microscopy). The characteristics of AFM lead to the ability to measure the thickness of thin films regardless of the kinds and conductivity of the samples. To verify the usefulness of this method, the thickness of SiO/sub 2/ grown on Si was determined. We compared the thickness value determined using this method with TEM (transmission electron microscopy) data. We obtained reasonable thickness data between 20 and 40 /spl Aring/ compared with TEM data. In addition, using our method, we studied the influence of chemical oxide generated during H/sub 2/SO/sub 4/ PR strip on determining the thickness of the SiO/sub 2/ films.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126223611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Proximity effect correction for large patterns in electron-beam projection lithography 电子束投影光刻中大图样的接近效应校正
M. Osawa, K. Takahashi, M. Sato, H. Arimoto, K. Ogino, H. Hoshino, Y. Machida
{"title":"Proximity effect correction for large patterns in electron-beam projection lithography","authors":"M. Osawa, K. Takahashi, M. Sato, H. Arimoto, K. Ogino, H. Hoshino, Y. Machida","doi":"10.1109/IMNC.2001.984059","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984059","url":null,"abstract":"In electron-beam projection lithography (EPL), a variety of patterns is exposed at once and dose modification method can not be used for proximity effect correction. Pattern shape modification method is a strong candidate. It requires a special technique for large patterns since the back scattering energy can not be reduced by simple sizing. We have proposed a correction algorithm employing both shape modification and interior area removal method in which pattern densities at the middle parts of large patterns are reduced by utilizing lines and spaces patterns (L/S) or mesh patterns. In the process of interior area removal, a concrete method of pattern generation of L/S or mesh has not been proposed. In this paper, the authors discuss which patterns, L/S or mesh, should be used and how to determine the widths of line and space of these patterns.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122802771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low loss optical coat for 157 nm lithography 157nm光刻用低损耗光学涂层
A. Matsumoto, A. Tanaka, J. Saito, J. Nagatsuka, T. Saito, S. Niisaka, K. Sone, M. Otani, C. Ouchi, M. Hasegawa, Y. Suzuki, R. Biro
{"title":"Low loss optical coat for 157 nm lithography","authors":"A. Matsumoto, A. Tanaka, J. Saito, J. Nagatsuka, T. Saito, S. Niisaka, K. Sone, M. Otani, C. Ouchi, M. Hasegawa, Y. Suzuki, R. Biro","doi":"10.1109/IMNC.2001.984075","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984075","url":null,"abstract":"The authors are aiming to develop an optical coating which has low optical loss at 157 nm; the loss should be <0.3% under our criteria. The optical loss of the optical coating consists of scattering, absorption, and reflection losses. We have provided newly developed instrumentation to measure the optical loss: a scatterometer, absorption measurement, and a VUV spectrometer. Using these measurement systems, we have investigated the transmittance (T), reflectance (R), absorptance loss, and scattering loss of five coating materials (AlF/sub 3/, Na/sub 3/AlF/sub 6/, MgF/sub 2/, LaF/sub 3/, GdF/sub 3/) and three deposition processes (resistive heat evaporation, electron beam heat evaporation, ion beam sputter). In this paper, we introduce the scatterometer, absorption measurement, and VUV spectrometer. We also discuss the measurement results of the test samples.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125490252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Oxygen pressure dependence of the initial oxidation on Si[001] surface studied by AES combined with 用原子发射光谱法(AES)研究了Si[001]表面初始氧化的氧压依赖性
Y. Takakuwa, F. Ishida, T. Kawawa
{"title":"Oxygen pressure dependence of the initial oxidation on Si[001] surface studied by AES combined with","authors":"Y. Takakuwa, F. Ishida, T. Kawawa","doi":"10.1109/IMNC.2001.984113","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984113","url":null,"abstract":"Si thermal oxidation has been and will be one of the key processes in fabrication of MOSFET devices designed with a scale of sub-micrometers. For the sake, SiO, layers as thin as sub-nanometers are demanded. Such an initial stage of Si thermal oxidation is strongly affected in growth and surface morphology by the 0, pressure and temperature.') In this study, Auger electron spectroscopy combined with reflection high energy electron diflaction (RHEED-AES) was employed to observe simultaneously the time evolution of surface morphology and SiO, coverage as a function of 0, pressure during thermal oxidation on a Si(OO1)2x1 surface in order to clarify the surface reaction mechanism of Si initial oxidation.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129416472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical film formation with O/sub 2/ cluster ion assisted deposition 用O/亚2/簇离子辅助沉积形成光学薄膜
K. Shirai, Y. Fujiwara, R. Takahashi, N. Toyoda, S. Matsui, T. Mitamura, M. Terasawa, H. Tsubakino, I. Yamada
{"title":"Optical film formation with O/sub 2/ cluster ion assisted deposition","authors":"K. Shirai, Y. Fujiwara, R. Takahashi, N. Toyoda, S. Matsui, T. Mitamura, M. Terasawa, H. Tsubakino, I. Yamada","doi":"10.1109/IMNC.2001.984115","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984115","url":null,"abstract":"Formation of high-quality optical films is increasingly important due to the rapid progress of optical components. These films must be durable, dense and very flat. We have developed a noble film formation process by cluster ion assisted deposition. Unique characteristics of cluster ion bombardment have been found such that it is applicable for various industrial applications that cannot be achieved by conventional ion beam processing (Yamada et al, 2000). Cluster ions can transport thousands of atoms per ion with very low energy and realize dense energy deposition within a very localized region, which enhances the chemical reaction between clusters and target atoms near its surface (Toyoda et al, 1997). Furthermore, cluster ions exhibit a surface smoothing effect due to lateral sputtering effects. These properties are useful for the formation of high quality thin films. In this work, we focused on optical thin films such as Ta/sub 2/O/sub 5/, TiO/sub 2/ and SiO/sub 2/. We have fabricated Ta/sub 2/O/sub 5//SiO/sub 2/ multi-layer structures with O/sub 2/ cluster ion assisted deposition and studied the quality of these optical films by AFM observations, environmental tests and various optical measurements.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114534491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of thermopile based on CMOS materials and post CMOS micromachining 基于CMOS材料和后CMOS微加工的热电堆表征
C. Du, Chengkuo Lee
{"title":"Characterization of thermopile based on CMOS materials and post CMOS micromachining","authors":"C. Du, Chengkuo Lee","doi":"10.1109/IMNC.2001.984066","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984066","url":null,"abstract":"Recently, the micromachined sensors using CMOS compatible process are developed and attractive for mass production. The thermopile sensor manufacture by CMOS process and post-CMOS bulk micromachining was reported by H. Baltes (2000), that using back-side Si bulk etching using KOH solution. This paper presents characterization analysis of practical thermopile sensor, using the extensive experiment result of measuring heat conductance of thermopile detector produced by CMOS compatible process and post front-side Si bulk etching using TMAH solution.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128544308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
SPM application of carbon nanotubes: probes and tweezers 碳纳米管在SPM中的应用:探针和镊子
Y. Nakayama, S. Akita
{"title":"SPM application of carbon nanotubes: probes and tweezers","authors":"Y. Nakayama, S. Akita","doi":"10.1109/IMNC.2001.984068","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984068","url":null,"abstract":"In this paper, we report the processes of the growth and manipulation of carbon nanotubes, which enables us to fabricate not only nanotube probes but also nanotube tweezers. We also discuss scanning probe microscope (SPM) images taken by resulted nanotube probes and operation of nanotube tweezers.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123643816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Portable biochemical detection systems using microfluidic and BioMEMS devices 使用微流体和生物机械设备的便携式生化检测系统
C. Ahn
{"title":"Portable biochemical detection systems using microfluidic and BioMEMS devices","authors":"C. Ahn","doi":"10.1109/IMNC.2001.984040","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984040","url":null,"abstract":"In this paper, recent research activities at the Microsystems and BioMEMS Laboratory at the University of Cincinnati (UC) will be presented, which includes handheld biochemical detection systems with sampling and analysis capabilities and plastic based disposable biochips for clinical diagnostics. In the past few years, numerous microfluidic prototype devices and systems have been developed, specifically for biochemical warfare detection systems and portable diagnostic applications. BioMEMS-research team at the University of Cincinnati has been working on the development of a remotely accessible generic microfluidic system for biochemical detection and biomedical analysis, based on the concepts of both surface-mountable microfluidic motherboards and electrochemical detection techniques. The goal of this work is to develop a generic MEMS-based microfluidic system and to apply the fluidic system to detect bio-molecules such as specific proteins and/or antigens in liquid samples.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130290530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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