利用原子力显微镜测量超薄薄膜厚度

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI:10.1109/IMNC.2001.984179

T. Kim, H. Kwon, J. Lee, Byung-Gook Park

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引用次数: 2

摘要

提出了一种利用原子力显微镜(AFM)测量薄膜厚度的新方法。原子力显微镜的特性使其能够测量薄膜的厚度，而不考虑样品的种类和电导率。为了验证该方法的有效性，测定了SiO/sub 2/生长在Si上的厚度。我们将用这种方法测定的厚度值与透射电镜数据进行了比较。与TEM数据相比，我们获得了20 ~ 40 /spl /的合理厚度数据。此外，我们还利用我们的方法研究了H/sub 2/SO/sub 4/ PR条带过程中产生的化学氧化物对SiO/sub 2/薄膜厚度测定的影响。

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Thickness measurements of ultra-thin films using AFM

Proposes a new method that can measure the thickness of thin films regardless of the kinds of samples using AFM (atomic force microscopy). The characteristics of AFM lead to the ability to measure the thickness of thin films regardless of the kinds and conductivity of the samples. To verify the usefulness of this method, the thickness of SiO/sub 2/ grown on Si was determined. We compared the thickness value determined using this method with TEM (transmission electron microscopy) data. We obtained reasonable thickness data between 20 and 40 /spl Aring/ compared with TEM data. In addition, using our method, we studied the influence of chemical oxide generated during H/sub 2/SO/sub 4/ PR strip on determining the thickness of the SiO/sub 2/ films.

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Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

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