基于CMOS材料和后CMOS微加工的热电堆表征

C. Du, Chengkuo Lee
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引用次数: 4

摘要

近年来,采用CMOS兼容工艺的微机械传感器得到了发展,并具有量产的前景。H. Baltes(2000)报道了采用CMOS工艺和后CMOS体微加工制造热电堆传感器,该工艺使用KOH溶液进行背面硅体蚀刻。本文利用利用TMAH溶液测量CMOS兼容工艺生产的热电堆探测器的热传导率的大量实验结果,对实际热电堆传感器的特性进行了分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characterization of thermopile based on CMOS materials and post CMOS micromachining
Recently, the micromachined sensors using CMOS compatible process are developed and attractive for mass production. The thermopile sensor manufacture by CMOS process and post-CMOS bulk micromachining was reported by H. Baltes (2000), that using back-side Si bulk etching using KOH solution. This paper presents characterization analysis of practical thermopile sensor, using the extensive experiment result of measuring heat conductance of thermopile detector produced by CMOS compatible process and post front-side Si bulk etching using TMAH solution.
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