用掩模偏置法校正EPL接近度和库仑效应

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI:10.1109/IMNC.2001.984137

H. Kobinata, Y. Yamada, T. Tamura, K. Fujii, O. Shinbo, H. Nozue

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引用次数: 0

摘要

掩模偏置法是一种适合于EPL接近效应校正的方法。然而，当图案的光束模糊度发生变化时，后向散射能量引起的线宽减小比会发生变化。当子场中由于库仑相互作用引起的光束模糊不均匀时，应修改掩模偏置的值。本文讨论了考虑子场库仑相互作用分布的邻近效应校正方法。

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EPL proximity and Coulomb effect correction by mask bias method

The mask bias method has proved to be a suitable method for EPL proximity effect correction. However, the linewidth reduction ratio due to the backscattering energy changes if the beam blur of the pattern changes. When the beam blur due to the Coulomb interaction effect in the sub-field is not uniform, the value of the mask bias should be modified. In this paper, we discuss the proximity effect correction method, considering the Coulomb interaction distribution in the sub-field.

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Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

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