基于DUV检测光源的PSM检测新方法

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI:10.1109/IMNC.2001.984070

I. Isomura, H. Tsuchiya, S. Sugihara, K. Yamashita, M. Tabata

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引用次数: 0

摘要

对于130纳米一代，相移掩模(PSM)有望得到广泛应用。此外，对高透射率PSM的需求正在增加，并且还需要对这些掩模具有高检测灵敏度的掩模检测系统。本文讨论了一种新的检测方法，以提高DUV检测系统中PSM的缺陷检测灵敏度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A new inspection method for PSM on DUV inspection light source

For the 130 nm generation, the Phase Shift Mask (PSM) is expected to be widely used. Moreover, demand for higher transmission PSM is increasing and a mask inspection system with high detection sensitivity for these masks is also required. In this paper, a new inspection method to improve defect detection sensitivity for a PSM in the DUV inspection system is discussed.

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Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

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