Easy removal of mold for imprint lithography by ion beam modification of photoresist surface

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI:10.1109/IMNC.2001.984106

A. Baba, M. Iwamoto, K. Tsubaki, T. Asano

引用次数: 0

Abstract

We have found that ion beam modification of the novolac photoresist surface is very effective in removing mold in NIL. Using this process, step-and-repeat pattern transfer becomes possible. In addition, this process can increase the imprint depth.

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通过离子束修饰光刻胶表面，轻松去除压印模

我们发现，离子束对novolac光刻胶表面进行改性，可以有效地去除NIL中的霉菌。使用这个过程，步进重复模式转移成为可能。此外，这种工艺可以增加压印深度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

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