Ultra fine multi-line patterning based on sidewall patterning technique

Abstract

A patterning technique to define nanoscale multiple lines is developed and optimized using sidewall structure. In this experiment, sidewall multi-line patterning technique makes it possible to realize about 50nm poly-Si lines which have 70nm as the narrowest space. This technique is a proximity effect free fabrication process, so it is expected that the sidewall multi-line patterning technique can be applied to fabricate single electron devices, quantum devices, and other nanoscale devices.