Ultra fine multi-line patterning based on sidewall patterning technique

Kyung-Hoon Chung, Suk-kang Sung, J. Lee, Byung-Gook Park
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引用次数: 1

Abstract

A patterning technique to define nanoscale multiple lines is developed and optimized using sidewall structure. In this experiment, sidewall multi-line patterning technique makes it possible to realize about 50nm poly-Si lines which have 70nm as the narrowest space. This technique is a proximity effect free fabrication process, so it is expected that the sidewall multi-line patterning technique can be applied to fabricate single electron devices, quantum devices, and other nanoscale devices.
基于侧壁图案技术的超精细多线图案
提出并优化了一种利用侧壁结构定义纳米尺度多线的图像化技术。在本实验中,侧壁多线图像化技术使得以70nm为最窄空间的约50nm多晶硅线成为可能。该技术是一种无邻近效应的制造工艺,因此有望将侧壁多线图像化技术应用于制造单电子器件、量子器件和其他纳米级器件。
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