Effects of doping methods on characteristics of InAs quantum dots

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI:10.1109/IMNC.2001.984149

Young Min Park, Young Ju Park, Kwang Moo Kim, Jae-Hyek Shin, E. Kim, M. Son, S. Hwang, K. Yoo

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Abstract

We compared the effects of two different doping methods on electronic states of self-assembled InAs quantum dots using photoluminescence and C-V spectroscopy. Analytical interpretation will be presented in conjunction with the experimental data.

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掺杂方式对InAs量子点特性的影响

利用光致发光和C-V光谱比较了两种不同掺杂方式对自组装InAs量子点电子态的影响。分析解释将结合实验数据提出。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

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