Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)最新文献_第6页

Laser-SQUID microscopy: novel nondestructive and non-electrical-contact tool for inspection, monitoring and analysis of LSI-chip-electrical-defects 激光- squid显微镜:用于检测、监测和分析lsi芯片电气缺陷的新型无损和非电接触工具

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984069

K. Nikawa

{"title":"Laser-SQUID microscopy: novel nondestructive and non-electrical-contact tool for inspection, monitoring and analysis of LSI-chip-electrical-defects","authors":"K. Nikawa","doi":"10.1109/IMNC.2001.984069","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984069","url":null,"abstract":"We propose a new technique that can detect electrical defects nondestructively without any electrical contact with the outside. It is, therefore, applicable not only to the failure analysis but also to the in-line inspection and monitoring. The basic idea of the technique is detection of a magnetic field produced by a laser-beam-induced current by using a HTS (high-temperature-superconducting) DC-SQUID (superconducting quantum interference device) magnetometer. The intensity of magnetic flux detected by the SQUID magnetometer is imaged, while scanning a laser beam and a sample relatively. The spatial resolution of this scanning laser-SQUID microscopy (\"laser-SQUID\" for short) is expected to be much better than conventional SQUID microscopy because it is limited by the laser beam diameter: that of the conventional SQUID microscopy, on the other hand, is limited by the size of the detector and the distance between the detector and a sample. An experiment using a prototype system has showed that the spatial resolution is about one um. Other experiments have demonstrated the application of the laser-SQUID to LSI inspection and analysis.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130894418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Comparision between alicyclic resist platforms in advanced 193-nm and 157-nm lithography 先进193nm和157nm光刻工艺中脂环抗蚀剂平台的比较

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984194

T. Ushirogouchi, N. Shida, T. Naito, S. Saito

引用次数: 0

The double exposure strategy using OPC and simulation and the performance on wafer with sub-0.10 /spl mu/m design rule in ArF lithography 在ArF光刻中，采用OPC和仿真的双曝光策略和低于0.10 /spl μ m的设计规则在晶圆上的性能

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984036

Se-young Oh, W. Kim, Hyoungsoon Yune, Hee-bom Kim, Seomin Kim, C. Ahn, Y. Ham, Ki-Soo Shin

引用次数: 1

Nanohole formation by FIB and its application to biomolecular sensors FIB形成纳米孔及其在生物分子传感器中的应用

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984047

T. Sakamoto, H. Kawaura

引用次数: 0

Combination of SiDWEL process and conventional electron sensitive resists in a complementary technique for the fabrication of X-ray masks SiDWEL工艺与传统电子敏感电阻相结合，形成了一种互补的x射线掩模制造技术

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984131

E. Lavallée, J. Beauvais, D. Drouin, P. Yang, D. Turcotte

引用次数: 0

Thin layer resist imaging for EUVL EUVL的薄层抗蚀成像

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984122

M. Ryoo, S. Shirayone, E. Yano, S. Okazaki

引用次数: 1

MEMS micro-switches for use in DC, RF, and optical applications 用于直流，射频和光学应用的MEMS微开关

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984062

K. Suzuki

引用次数: 0

A polymeric capillary electrophoretic microfluidic device for separation and electrospray ionization of small molecules 一种用于小分子分离和电喷雾电离的聚合毛细管电泳微流控装置

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984155

J. Kameoka, H. Zhong, J. Henion, D. Mawhinney, H. Craighead

{"title":"A polymeric capillary electrophoretic microfluidic device for separation and electrospray ionization of small molecules","authors":"J. Kameoka, H. Zhong, J. Henion, D. Mawhinney, H. Craighead","doi":"10.1109/IMNC.2001.984155","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984155","url":null,"abstract":"We have used an embossed plastic microfluidic system for rapid electrophoretic separation of small molecules and electrospray ionization. We have also visualized the separation of compounds by observation of dyes in microfluidic systems and electrospray from the edge of the device. We used a lithographically produced silicon master to emboss channels in ZEONOR 1020R plastic. An oxygen plasma or chromic acid was used to convert the plastic channel surface from hydrophobic to hydrophilic for the separation of molecules in aqueous solution. The channel was scaled by thermal bonding of a cover piece of the same plastic material. The microfluidic device for electrophoretic separation and fluorescence detection had a separation channel 50 /spl mu/m wide, 20 /spl mu/m deep and 3.0 cm long. This was used to separate two dye molecules, Rhodamine B and Texas Red. The microfluidic device for electrospray ionization directly from the chip had a separation channel 30 /spl mu/m wide, 10 /spl mu/m deep, and 10 /spl mu/m wide, terminating in a nozzle-like pyramid fabricated at the edge of device. The sample volume injected through the cross junction for fluorescence detection device was approximately 1.2 nl and two dyes were separated within 8 seconds with the application of an electric field 300 V/cm.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126190074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Narrowband spectrum effect on resolution enhancement for 50-nm pattern printing by proximity x-ray lithography 窄带光谱效应对近距离x射线光刻50nm图案印刷分辨率提高的影响

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984191

H. Watanabe, K. Itoga

引用次数: 0

Inspection for critical issue of floating body effects in SOI-MOSFET using nuclear particles 核粒子检测SOI-MOSFET中浮体效应的关键问题

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI: 10.1109/IMNC.2001.984077

S. Abo, M. Mizutani, K. Nakayama, T. Takaoka, T. Iwamatsu, Y. Yamaguchi, S. Maegawa, T. Nishimura, A. Kinomura, Y. Horino, M. Takai

{"title":"Inspection for critical issue of floating body effects in SOI-MOSFET using nuclear particles","authors":"S. Abo, M. Mizutani, K. Nakayama, T. Takaoka, T. Iwamatsu, Y. Yamaguchi, S. Maegawa, T. Nishimura, A. Kinomura, Y. Horino, M. Takai","doi":"10.1109/IMNC.2001.984077","DOIUrl":"https://doi.org/10.1109/IMNC.2001.984077","url":null,"abstract":"Floating body effects are problems induced by the excess carriers generated in an SOI body, which results in enhancement of the body potential in SOI-MOSFETs. Such excess carriers are induced by hot electrons generated by a strong field gradient at and nearby the source and drain. Suppression of the floating body effects is important for realization of SOI-MOSFETs. There are two types of SOI substrate: one is a fully depleted (FD) substrate, where the SOI layer is <50 nm, and the other is a partially depleted (PD) substrate where the SOI layer is >100 nm. PD substrate fabrication is simple, but an SOI-MOSFET on PD substrate has kinks and floating body effects (Colinge, 1998). A PD-SOI-MOSFET with body-tied structure is the simplest way to suppress the floating body effects, in which body contact electrodes are put on the side of the SOI body and tied to the source contact. In our recent studies, floating body effects in parallel connected PD-SOI-MOSFETs were induced by nuclear microprobe irradiation (Takai et al, 1999; Iwamatsu et al, 2000). The effectiveness of the body contact electrodes was clarified. In this study, instability of parallel and single PD and FD SOI-MOSFETs has been studied by experiments and two types of three dimensional computer simulations.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127490494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0