EUVL的薄层抗蚀成像

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI:10.1109/IMNC.2001.984122

M. Ryoo, S. Shirayone, E. Yano, S. Okazaki

{"title":"EUVL的薄层抗蚀成像","authors":"M. Ryoo, S. Shirayone, E. Yano, S. Okazaki","doi":"10.1109/IMNC.2001.984122","DOIUrl":null,"url":null,"abstract":"In this article, we show the imaging results and the lithographic properties of commercially available DUV-based single-layer and bilayer resists exposed to EUV radiation. The selected resists were UV-3 and UV-113 (Shipley) for single-layer experiments and EUV008S (TOK) for bilayers. All exposures were conducted with the ASET 20X EUV micro-stepper.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"4 10","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Thin layer resist imaging for EUVL\",\"authors\":\"M. Ryoo, S. Shirayone, E. Yano, S. Okazaki\",\"doi\":\"10.1109/IMNC.2001.984122\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article, we show the imaging results and the lithographic properties of commercially available DUV-based single-layer and bilayer resists exposed to EUV radiation. The selected resists were UV-3 and UV-113 (Shipley) for single-layer experiments and EUV008S (TOK) for bilayers. All exposures were conducted with the ASET 20X EUV micro-stepper.\",\"PeriodicalId\":202620,\"journal\":{\"name\":\"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)\",\"volume\":\"4 10\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMNC.2001.984122\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.2001.984122","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在本文中，我们展示了市售的基于duv的单层和双层抗蚀剂暴露在EUV辐射下的成像结果和光刻性能。选择的抗蚀剂为UV-3和UV-113 (Shipley)用于单层实验，EUV008S (TOK)用于双层实验。所有暴露均使用ASET 20X EUV微步进仪进行。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Thin layer resist imaging for EUVL

In this article, we show the imaging results and the lithographic properties of commercially available DUV-based single-layer and bilayer resists exposed to EUV radiation. The selected resists were UV-3 and UV-113 (Shipley) for single-layer experiments and EUV008S (TOK) for bilayers. All exposures were conducted with the ASET 20X EUV micro-stepper.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

自引率

0.00%

发文量